器件名称: Si1012X
功能描述: N-Channel 1.8-V (G-S) MOSFET
文件大小: 50.57KB 共5页
简 介:Si1012R/X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V
ID (mA)
600 500 350
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G 1
Ordering Information: SC-75A (SOT– 416): Si1012R–Marking Code : C SC-89 (SOT– 490): Si1012X–Marking Code: A
Top View
3
D
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta TA = 25_C TA = 85_C
Symbol
VDS VGS
5 secs
20
Steady State
Unit
V
"6 600 500 350 1000 275 175 90 250 150 80 250 140 –55 to 150 2000
ID 400 IDM IS mA
Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC-75 TA = 25_C TA = 85_C TA = 25_C TA = 85_C
PD
275 160
mW
Maximum Power Dissipationb for SC-89 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Pulse width limited by maximum junction temperature. b. Surface ……
