器件名称: FZT749
功能描述: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
文件大小: 99.26KB 共2页
简 介:SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A (pulsed). COMPLEMENTARY TYPE PARTMARKING DETAIL FZT649 FZT749
FZT749
C
E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -35 -25 -5 -8 -3 2 -55 to +150 UNIT V V V -0.1 -10 -0.1 -0.12 -0.40 -0.9 -0.8 -0.3 -0.6 -1.25 -1.0 300 MHz 100 pF ns
A A A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Currents Saturation Voltages ICBO IEBO VCE(sat) VBE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times VBE(on) hFE 70 100 75 15 100 -35 -25 -5 UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-30V VCB=-30V,Tamb=100°C VEB=4V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V f=1MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA
V V V V
200 200 150 50 160 55 40
fT Cobo ton
toff 450 ns *Measured under pulsed conditions. Pulse Width=300s. Duty cycle ≤2% Spic……
