器件名称: FZT749
功能描述: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
文件大小: 87.21KB 共2页
简 介:FZT749 FZT749
C
SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
TYPICAL CHARACTERISTICS
IB1=IB2=IC/10 VCE=-10V
td
tr
1.8
tf
ns
1.6
160
1.4
ts
140
ISSUE 4 - NOVEMBER 1995 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A (pulsed). COMPLEMENTARY TYPE PARTMARKING DETAIL FZT649 FZT749
ns
E C B
1.2
ts
1200
120
- (Volts)
1.0
tf
1000
100
0.8
80
V
Switching time
0.6
td
600
60
IC/IB=100
tr
0.4
40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
1
0.2
200
20
IC/IB=10
0.1
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
VALUE -35 -25 -5 -8 -3 2 -55 to +150
UNIT V V V A A W °C
0
0
0.001
0.01
0.1
1
10
0.01
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
1.2
200
1.0
- Gain
160 IC/IB=10
VCE=2V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Breakdown Voltages
IC/IB=100
0.8
SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -35 -25 -5
TYP.
MAX.
UNIT V V V -0.1 -10 -0.1 VCE(sat) VBE(sat) -0.12 -0.40 -0.3 -0.6
A A A
120
- (Volts)
CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-30V VCB=-30V,Tamb=100°C VEB=4V V V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA*
h
0.6
80
V
0.4
40 0.001 0.01 1 10 0.1
0.001
0.01
0.1
1
10
Collector Cu……
