器件名称: FZT953
功能描述: SOT223 PNP SILICON PLANAR HIGH CURRENT
文件大小: 110.03KB 共5页
简 介:SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps * Ptot = 3 watts * FZT951 exhibts extremely low equivalent on resistance; RCE(sat) 55m at 4A COMPLEMENTARY TYPES - FZT951 = FZT851 FZT953 = FZT853 PARTMARKING DETAILS DEVICE TYPE IN FULL
FZT951 FZT953
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -15 -5 3 -55 to +150 FZT951 -100 -60 -6 -10 FZT953 -140 -100 UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
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FZT951
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) -20 -85 -155 -370 -1080 -935 100 100 75 10 200 200 90 25 120 74 82 350 MIN. -100 -100 -60 -6 TYP. -140 -140 -90 -8 -50 -1 -50 -1 -10 -50……
