器件名称: FZT953
功能描述: SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
文件大小: 124.63KB 共5页
简 介:SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
FZT951 FZT953
C
E C B
ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps * Ptot = 3 watts * FZT951 exhibts extremely low equivalent on resistance; RCE(sat) 55m at 4A COMPLEMENTARY TYPES - FZT951 = FZT851 FZT953 = FZT853 PARTMARKING DETAILS DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -15 -5 3 -55 to +150 SYMBOL FZT951 -100 -60 -6 -10 FZT953 -140 -100 UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
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FZT951
TYPICAL CHARACTERISTICS
IC/IB=50 Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 IC/IB=10 IC/IB=10
FZT951
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
MAX. UNIT CONDITIONS. IC=-100 A
1.6 1.4 1.2 1.0 0.8 0.6 0.4
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage V IC=-10mA* IE=-100 A
0.2 0 0.001
VCE(sat) - (Volts)
Emitter-Base Breakdown Voltage -50 -1
IC - Collector Current (Amps)
Collector Cut-Off Current nA A nA A VCB=……
