器件名称: FZT657
功能描述: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
文件大小: 100.22KB 共2页
简 介:SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE - FZT757
FZT657
C
E PARTMARKING DETAIL - FZT657 B C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL MIN. V(BR)CBO V(BR)CEO 300 300 5 0.1 0.1 0.5 1.0 1.0 40 50 30 20 MHz pF SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE 300 300 5 1 0.5 2 -55 to +150 UNIT V V V
A A
UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
CONDITIONS. IC=100A IC=10mA* IE=100A VCB=200V VEB=3V IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE =5V* IC=10mA, VCE =5V* IC=100mA, VCE =5V* IC=10mA, VCE =20V f=20MHz VCB =20V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo
V V V
*Measured under pulsed conditions. Pulse Width=300s. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 213
FZT657
TYPICAL CHARACTERISTICS
1.8 1.6 100
- Normalised Gain (%)
1.4
80 VCE=5V 60
- (……
