器件名称: FZT657
功能描述: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
文件大小: 88.59KB 共2页
简 介:FZT657
ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage C COMPLEMENTARY TYPE - FZT757 E
VCE=5V
SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FZT657
TYPICAL CHARACTERISTICS
1.8
1.6
100
1.4
80
1.2
PARTMARKING DETAIL - FZT657 B
C
- (Volts)
1.0
IC /IB=10
60
0.8
0.6
40
V
0.4
0.2
h
0 0.01 0.1 1 10
- Normalised Gain (%)
20
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C
VCE=5V
0.01
0.1
1
10
0
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg SYMBOL MIN. TYP. MAX.
VALUE 300 300 5 1 0.5 2 -55 to +150 UNIT CONDITIONS.
UNIT V V V A A W °C
I+ - Collector Current (Amps) I+ - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
1.2
1.2
IC/IB=10
Operating and Storage Temperature Range PARAMETER
- (Volts)
0.8
- (Volts)
1.0
1.0
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Collector-Base Breakdown Voltage
0.01 0.1 1 10
0.8
V
V
V(BR)CBO V(BR)CEO
300 300 5 ICBO 0.1
V V V
A
IC=100A IC=10mA* IE=100A VCB=200V
0.6
0.6
0.4
0.01
0.1
1
10
0.4
Collector-Emitter Breakdown Voltage
I+ - Collector Current (Amps) I+ - Collector Current (Amps)
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current
VBE(sat) v IC VBE(on) v IC
1
IB1=IB2=IC/10 VCE=10V
ts ts 3 s
Single Pulse T est at Tamb=25°C
td
IEBO Collector-Emitter Saturation Voltage Base-Emitter Satu……
