器件名称: FZT689B
功能描述: SOT223 NPN SILICON PLANAR MEDIUM
文件大小: 115.46KB 共2页
简 介:SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995 FEATURES * Gain of 400 at IC=2 Amps and low saturation voltage * Extremely low equivalent on-resistance; RCE(sat) 92m at 3A APPLICATIONS * Darlington replacement * Flash gun convertors and Battery powered circuits PARTMARKING DETAIL FZT689B COMPLEMENTARY TYPE FZT789B
FZT689B
C
E C B VALUE 20 20 5 8 3 2 -55 to +150 UNIT V V V A A W °C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltage Collector-Base Collector-Emitter Emitter-Base Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. 20 20 5 0.1 0.1 0.10 0.50 0.45 0.9 0.9 500 400 150 150 200 16 30 800 MHz pF pF ns ns TYP.
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
MAX. UNIT CONDITIONS. V V V
A A
IC=100 A IC=10mA* IE=100 A VCB=16V VEB=4V IC=0.1A, IB=0.5mA* IC=2A, IB=10mA* IC=3A, IB=20mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=0.1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA,IB1=50mA IB2=50mA, VCC=10V
V V V V V
Base-EmitterSaturationVoltage VBE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Out……
