器件名称: FZT689B
功能描述: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 103.1KB 共2页
简 介:FZT689B
C
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT689B
TYPICAL CHARACTERISTICS
IC/IB=100
IC/IB=200
Tamb=25°C
0.8
IC/IB=10
IC/IB=100
0.8
-55°C +25°C +100°C +175°C
E C B VALUE 20 20 5 UNIT V V V
- (Volts)
- (Volts)
0.6
0.6
ISSUE 3 - OCTOBER 1995 FEATURES * Gain of 400 at IC=2 Amps and low saturation voltage * Extremely low equivalent on-resistance; RCE(sat) 92m at 3A APPLICATIONS * Darlington replacement * Flash gun convertors and Battery powered circuits PARTMARKING DETAIL FZT689B COMPLEMENTARY TYPE FZT789B
0.4
0.4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage
0.01 0.1 1 10
V
0.2
V
0.2
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) MIN. 20 20 5 0.1 0.1 0.10 0.50 0.45 TYP.
0
0
0.01
0.1
1
10
Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
8 3 2 -55 to +150
A A W °C
1.6 IC/IB=100
VCE=2V
1.4
+100°C +25°C -55°C
-55°C +25°C +100°C +175°C
1.5K
1.6
1.4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER MAX. UNIT CONDITIONS. V V V
A A
1.2
1.0
1.2
1K
- (Volts)
0.8
1.0
IC=100 A IC=10mA* IE=100 A VCB=16V VEB=4V V V V IC=0.1A, IB=0.5mA* IC=2A, IB=10mA* IC=3A, IB=20mA*
0.8
0.6
- Normalised Gain
V
0.4
- Typical Gain
500
0.6
Breakdown Voltage C……
