器件名称: FZT603
功能描述: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
文件大小: 134.09KB 共3页
简 介:SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
ISSUE 3 NOVEMBER 1995 FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching PARTMARKING DETAIL DEVICE TYPE IN FULL C
FZT603
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 100 80 10 6 2 2 -55 to +150 UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 0.79 0.80 0.88 0.99 0.86 MIN. 100 80 10 TYP. 240 110 16 0.01 10 0.1 10 0.88 0.90 1.00 1.13 MAX. UNIT V V V
A A A A
CONDITIONS. IC=100A IC=10mA* IE=100A VCB=80V VCB=80V, Tamb=100°C VEB=8V VCES=80V IC=0.25A, IB=0.25mA* IC=0.4A, IB=0.4mA* IC=1A, IB=1mA* IC=2A, IB=20mA* IC=2A, IB=20mA
V V V V V
Tj=150°C
FZT603
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER Base-Emitter Saturation Voltage SYMBOL VBE(sat) MIN. TYP. 1.7 1.5 3k 5k 3k 2k 14k 15k 14k 10k 2k 750 MAX. 1.95 1.75 100k UNIT V V CONDITIONS. IC=2A, IB=20mA* IC=2A, VCE=5V* IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=5A, VCE=5V* IC=6A, VCE……
