器件名称: FZT603
功能描述: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
文件大小: 122.13KB 共3页
简 介:FZT603
Millimeters Max 6.7 3.7 1.7 0.8 3.1 0.32 NOM 0.181 0.033 0.0008 0.264 NOM 0.0905 Power Dissipation Operating and Storage Temperature Range Continuous Collector Current 0.287 Peak Pulse Current 0.004 Emitter-Base Voltage 0.041 Collector-Emitter Voltage Collector-Base Voltage 1.05 0.10 7.3 0.009 0.013 PARAMETER VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 0.114 0.122 0.024 0.031 0.067 0.130 0.146 PARTMARKING DETAIL DEVICE TYPE IN FULL B 0.248 0.264 Min Max Inches ISSUE 3 NOVEMBER 1995 FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching C
SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
FZT603
PACKAGE OUTLINE DETAILS
Dim
Min
A
6.3
E C
B
3.3
C
D
0.6
E NOM 4.6
2.9
ABSOLUTE MAXIMUM RATINGS.
SYMBOL VALUE 100 80 10 6 2 2 -55 to +150 UNIT V V V A A W °C
F
0.24
G
H
0.85
K NOM 2.3
0.02
L
6.7
M
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 0.79 0.80 0.88 0.99 0.86 Tj=150°C MIN. 100 80 10 TYP. 240 110 16 0.01 10 0.1 10 0.88 0.90 1.00 1.13 MAX. UNIT V V V
A A A A
CONDITIONS. IC=100A IC=10mA* IE=100A VCB=80V VCB=80V, Tamb=100°C VEB=8V VCES=80V V V V V V IC=0.25A, IB=0.25mA* IC=0.4A, IB=0.4mA* IC=1A, IB=1mA* IC=2A, IB=20mA* IC=2A, ……