器件名称: 2SC1008
功能描述: NPNPlastic-Encapsulate Transistor
文件大小: 352.17KB 共3页
简 介:WEITRON
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
2SC1008
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter
Collector-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO ICM PCM TJ Tstg
Value
80 0.7 0.8 -55 to +150 -55 to +150
Units
V A W °C °C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency
CLASSIFICATION OF h FE
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO I CBO IEBO hFE VCE(sat) V BE(sat) fT
Test conditions
IC= 100A, I E=0 IC= 10mA, IB =0 IE= 10A, I C =0 VCB= 60V, I E =0 VEB= 5V, IC =0 VCE = 2V, I C = 50mA IC=500mA, IB= 50mA IC=500mA, IB= 50mA VCE=10V,IC=50mA
MIN
80 60 8
TYP
MAX
Units
V V V
0.1 40 0.1 400 0.4 1.1 30
A A V V MHz
Rank Range
R 40-80
O 70-140
Y 120-240
G 200-400
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2SC1008
Typical Characteristics
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2SC1008
TO-92 Outline Dimensions
E
unit:mm
TO-92
H
C
J K
G
Dim A B C D E G H J K L
M in Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
B
L
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D
A
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