器件名称: 2SC1008
功能描述: TRANSISTOR NPN
文件大小: 352.04KB 共3页
简 介:东莞市华远电子有限公 司
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189
2SC1008
FEATURES
TRANSISTOR(NPN ) TO— 92
Power dissipation PCM : 0.8 W(Tamb=25℃) Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 80 V Operating and storage junction temperature range T J ,T stg: -55℃ to +150℃
1.EMITTER
2. BASE
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS( Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat)
unless
Test
otherwise
MIN 80 60 8
specified)
TYP MAX UNIT V V V 0.1 0.1 μA μA
conditions
Ic= 100μA , IE=0 IC= 10mA , IB=0 IE= 10μA, IC=0 VCB=60 V , IE=0 VEB= 5 V , IC=0
VCE= 2 V, IC=50m A IC= 500mA, IB=50 mA IC=500mA, IB=50m A VCE=10V, IC= 50mA
40
400 0.4 1.1 V V MHz
fT
30
CLASSIFICATION OF h FE
Rank Range R 40-80 O 70-140 Y 120-240 G 200-400
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b φ
e e1
Symbol A A1 b c D D1 E e e1 L
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 ……