器件名称: FZT758
功能描述: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
文件大小: 109.8KB 共2页
简 介:SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 2 FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT658 PARTMARKING DETAIL FZT758 C
FZT758
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. MAX. VALUE -400 -400 -5 -1 -500 2 -55 to +150 UNIT CONDITIONS. UNIT V V V A mA W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching times V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff 140 2000 50 50 40 50 20 Typical Typical MHz pF ns ns -400 -400 -5 -100 -100 -100 -0.30 -0.25 -0.50 -0.9 -1.0 V V V nA nA nA V V V V V IC=-100 A IC=-10mA* IE=-100 A VCB=-320V VCE=-320V VEB=-4V IC=-20mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-100mA, VCE=-5V* IC=-200mA, VCE=-10V* IC=-20mA, VCE=-20V f=20MHz……
