器件名称: FZT758
功能描述: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
文件大小: 92.7KB 共2页
简 介:FZT758 FZT758
C
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
TYPICAL CHARACTERISTICS
IC /IB =10
1.6
IC/IB =10
1.4
IC/IB =50
IC/IB =20
Tamb=25°C
1.6
1.4
-55°C +25°C +100°C +175°C
ISSUE 2 FEBRUARY 1995 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT658 PARTMARKING DETAIL FZT758 B
E C
1.2
1.2
- (Volts)
- (Volts)
1.0
1.0
0.8
0.8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage
0.01 0.1 1 10 20
0.6
0.6
V
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
VALUE -400 -400 -5 -1 -500 2 -55 to +150
UNIT V V V A mA W °C
0.4
V
0.4
0.2
0.2
0
0
0.001
0.01
0.1
1
10
20
0.001
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
VCE(sat) v IC
VCE(sat) v IC
1.6
VCE =10V
IC/IB =10
1.6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency VCE(sat) VBE(sat) VBE(on) hFE -400 -400 -5 -100 -100 -100 Emitter Cut-Off Current -0.30 -0.25 -0.50 -0.9 -1.0 V V V nA nA nA V V V V V IC=-100 A IC=-10mA* IE=-100 A VCB=-320V VCE=-320V VEB=-4V
1.4
+100°C +25°C -55°C
-55°C ……
