器件名称: FZT789A
功能描述: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 94.83KB 共2页
简 介:SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 93m at 3A * Gain of 200 at IC=2 Amps and very low saturation voltage APPLICATIONS * Battery powered circuits, fast charge converters COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER FZT689B FZT789A SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
FZT789A
C
E C B VALUE -25 -25 -5 -6 -3 2 -55 to +150 UNIT V V V A A W °C
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
Breakdown Voltages V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Saturation Voltages ICBO IEBO VCE(sat) -25 -25 -5 -40 -35 -8.5 -0.1 10 -0.1
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V
A A A
IC=-100 A IC=-10mA* IE=-100 A VCB=-15V VCB=-15V, Tamb=100°C VEB=-4V IC=-1A, IB=-10mA* IC=-2A, IB=-20mA* IC=-3A, IB=-100mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V*
-0.15 -0.25 V -0.30 -0.45 V -0.30 -0.50 V -0.8 -0.8 300 250 200 100 100 225 25 35 400 800 -1.0 V V
VBE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(on) hFE
fT Cibo Cobo ton toff
MHz IC=-50mA, VCE=-5V, f=50MHz pF ……
