器件名称: FZT789A
功能描述: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 82.67KB 共2页
简 介:FZT789A
C
SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT789A
TYPICAL CHARACTERISTICS
IC/IB=100
1.8
-55°C +25°C +100°C +175°C
1.6
IC/IB=100 IC/IB=40 IC/IB=10
Tamb=25°C
1.8
1.6
ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 93m at 3A * Gain of 200 at IC=2 Amps and very low saturation voltage APPLICATIONS * Battery powered circuits, fast charge converters
E C B
- (Volts)
1.0
- (Volts)
1.4 1.2
1.4 1.2
1.0
COMPLEMENTARY TYPE PARTMARKING DETAIL -
FZT689B FZT789A
0.8
0.8
V
V
0.6
0.6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage
0.01 0.1 1 10
0.4
0.4
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
VALUE -25 -25 -5 -6 -3 2 -55 to +150
UNIT V V V A A W °C
0.2 0
0.01
0.1
1
10
0.2 0
Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
VCE=2V IC/IB=100
-55°C +25°C +100°C +175°C
1.4
+100°C +25°C -55°C
750
1.6
1.4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
Breakdown Voltages
1.2
1.2
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO -25 -25 -5 ICBO IEBO VCE(sat) -40 -35 -8.5 -0.1 10 -0.1 V V V
A A A
- (Volts)
1.0
500
1.0
- Typical Gain
0.8
0.8
IC=-100 A IC=-10mA* IE=-100 A VCB=-15V VCB=-15V, Tamb=100°C VEB=-4V -0.15 -0.25 V -0.30 -0.45 V -0.30 -0……
