器件名称: 2SC2899
功能描述: Silicon NPN Triple Diffused
文件大小: 38.3KB 共7页
简 介:2SC2899
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
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3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
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Ratings 500 400 10 0.5 1.0 0.75 10 150 –55 to +150
Unit V V V A A W W °C °C
2SC2899
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ — — Max — — Unit V V Test conditions I C = 0.1 A, RBE = ∞, L = 100 mH I C = 0.5 A, IB1 = –IB2 = 0.1 A, VBE = –5 V, L = 180 H, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IC = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 0.25 A*1 VCE = 5 V, IC = 0.5 A*1 V V s s s I C = 0.5 A, IB1 = –IB2 = 0.1 A, VCC 150 V I C = 0.25 A, IB = 0.05 A*1
Emitter to base breakdown voltage Collector cutoff current
V(BR)EBO I CBO I CEO
10 — — 15 7 — — — — —
— — — — — — — — — —
— 20 50 — — 1.0 1.5 1.0 2.0 1.0
V A A
DC current transfer ratio
hFE1 hFE2
Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test
VCE(sat) VBE(sat) t on t stg tf
Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 10
Area of Safe Operation 50 s Collector Current IC (A……
