器件名称: 2SC2899
功能描述: Silicon NPN Power Transistors
文件大小: 148.15KB 共4页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2899
DESCRIPTION ·With TO-126 package ·High voltage,high speed APPLICATIONS ·For high speed and high voltage switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM
固电 IN
Collector-base voltage
体 导 半
PARAMETER
Collector-emitter voltage
Emitter-base voltage
G N A CH
C I M E SE
Open emitter Open base Open collector
CONDITIONS
OND
R O T UC
VALUE 500 400 10 0.5 1.0
UNIT V V V A A
Collector current Collector current-peak Ta=25℃
0.75 W 10 150 -55~150 ℃ ℃
PC
Collector power dissipation TC=25℃
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat hFE-1 hFE-2 ICBO ICEO PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Collector cut-off current Collector cut-off current CONDITIONS IC=0.1A; RBE=∞,L=100mH IE=10mA; IC=0 IC=250mA; IB=50m A IC=250mA ;IB=50m A IC=250mA ; VCE=5V IC=500mA ; VCE=5V VCB=400V; IE=0 VCE=350V; RBE=∞ 15 7 MIN 400 10
2SC2899
TYP.
MAX
UNIT V V
1.0 1.5
V V
20
μA μA
Switching times ton tstg tf
固电
Fall time
体 导 半
A H C IN
Storage time
Turn-on time
EM S E NG
D N O IC
R O T UC
50 1.0 2.0 1.……