器件名称: 2SA1617
功能描述: Silicon PNP Epitaxial
文件大小: 24.07KB 共5页
简 介:2SA1617
Silicon PNP Epitaxial
Application
High voltage amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SA1617
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –55 –50 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –50 –5 — —
1
Typ — — — — — — — —
Max — — — –0.5 –0.5 320 –0.2 –0.8
Unit V V V A A
Test conditions I C = –10 A, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 A, IC = 0 VCB = –30 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Note: Grade Mark hFE B VIB 100 to 200 C VIC 160 to 320 V(BR)EBO I CBO I EBO hFE*
100 — —
VCE(sat) VBE
V V
I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA
1. The 2SA1617 is grouped by hFE as follows.
See charcteristic curves of 2SA1031
2
2SA1617
Maximum Collector Dissipation Curve Collector power dissipation PC (mW) 150
100
50
0
50 100 150 Ambient Temperature Ta (°C)
3
Unit: mm
0.65
0.10 3 – 0.4 + – 0.05
0.16 – 0.06
+ 0.10
1.5 ± 0.15
+ 0.2 – 0.6
0 – 0.1
0.95
0.95
1.9 ± 0.2 2.9……
