器件名称: 2SA1617
功能描述: Silicon PNP Epitaxial
文件大小: 35.65KB 共1页
简 介:SMD Type
Silicon PNP Epitaxial 2SA1617
SOT-23
Transistors IC
Unit: mm
Features
3
+0.1 2.9-0.1 +0.1 0.4-0.1
+0.1 2.4-0.1
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -55 -50 -5 -100 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol Testconditons Min -55 -50 -5 -0.5 -0.5 100 320 -0.2 -0.8 V V Typ Max Unit V V V ìA ìA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ICBO IEBO hFE VCB = -30V, IE=0 VEB = -2V, IC=0 VCE = -12V , IC = -2mA
VCE(sat) IC = -10mA , IB = -1mA VBE VCE = -12V , IC = -2mA
hFE Classification
Marking Rank hFE B 100 200 VI C 160 320
+0.1 0.38-0.1
0-0.1
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