器件名称: 2SC2776
功能描述: Silicon NPN Epitaxial Planar
文件大小: 24.62KB 共5页
简 介:2SC2776
Silicon NPN Epitaxial Planar
Application
VHF amplifier Mixer, Local oscillator
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC2776
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 30 100 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 4 —
1
Typ — — — — — 0.8 1.1 320 5.5 17
Max — — — 0.5 200 1.2 — — — —
Unit V V V A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Noise figure Power gain V(BR)EBO I CBO hFE*
35 — — — — —
VCE(sat) Cob fT NF PG
V pF MHz dB dB
I C = 10 mA, IB = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 50 VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 100 , RL = 550 , Unneutralized
Note: Grade Mark hFE
1. The 2SC2776 is grouped by h FE as follows. A VA 35 to 70 B VB 60 to 120 C VC 100 to 200
See characteristic curves of 2SC1342.
2
2SC2776
Maximum Collector Dissipation Curve Collector Power Di……
