器件名称: 2SC2776
功能描述: Silicon NPN Epitaxial
文件大小: 36.95KB 共1页
简 介:SMD Type
Silicon NPN Epitaxial 2SC2776
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 4 30 100 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Noise figure Symbol Testconditons Min 30 20 4 0.5 35 0.8 1.1 320 5.5 200 1.2 V pF MHz dB Typ Max Unit V V V ìA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ICBO hFE VCB = 10V, IC = 0 VCE = 6 V, IC = 1 mA
VCE(sat) IC = 10 mA, IB = 1 mA Cob fT NF VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 MA VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 50 VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 100, RL = 550
Power gain
PG
17
+0.1 0.38-0.1
0-0.1
dB
hFE Classification
Marking Rank hFE VA A 35 70 VB B 60 120 VC C 100 200
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