器件名称: 2SA1566
功能描述: Silicon PNP Epitaxial
文件大小: 30.94KB 共6页
简 介:2SA1566
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SA1566
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –120 –120 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –5 — —
1
Typ — — — — — — — —
Max — — — –0.1 –0.1 800 –0.15 –1.0
Unit V V V A A
Test conditions I C = –10 A, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 A, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA*2 I C = –10 mA, IB = –1 mA*2 I C = –10 mA, IB = –1 mA*2
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage V(BR)EBO I CBO I EBO hFE*
250 — —
VCE(sat) VBE(sat)
V V
Notes: 1. The 2SA1566 is grouped by h FE as follows. 2. Pulse test Grade Mark hFE D JID 250 to 500 E JIE 400 to 800
2
2SA1566
Typical Output Characteristics Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 150 Collector Current IC (mA) –8 –10 Pulse
–20
–18
–16
–14 –12 –10
100
–6
–4
–8 –6
50
–2
–4 –2 A IB = 0
–4 –8 –12 –16 –20 Collector to Emitter V……
