器件名称: 2SA1566JIETL-E
功能描述: Silicon PNP Epitaxial
文件大小: 168.02KB 共6页
简 介:2SA1566
Silicon PNP Epitaxial
REJ03G0642-0200 (Previous ADE-208-1021) Rev.2.00 Aug.10.2005
Application
Low frequency amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –120 –120 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SA1566
Electrical Characteristics
(Ta = 25°C)
Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE(sat) Notes: 1. The 2SA1566 is grouped by hFE as follows. 2. Pulse test Grade D E Mark JID JIE hFE 250 to 500 400 to 800 Min –120 –120 –5 — — 250 — — Typ — — — — — — — — Max — — — –0.1 –0.1 800 –0.15 –1.0 Unit V V V A A V V Test conditions IC = –10 A, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 A, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA*2 IC = –10 mA, IB = –1 mA*2 IC = –10 mA, IB = –1 mA*2
Rev.2.00 Aug 10, 2005 page 2 of 5
2SA1566
Main Characteristics
Maximum Collector Dissipation Curve
Collector power dissipation Pc (mW)
15……
