器件名称: 2SC2618
功能描述: Silicon NPN Epitaxial
文件大小: 24.22KB 共5页
简 介:2SC2618
Silicon NPN Epitaxial
Application
Low frequency amplifier Complementary pair with 2SA1121
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC2618
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 35 35 4 500 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 4 —
1
Typ — — — — — — 0.2 0.64
Max — — — 0.5 320 — 0.6 —
Unit V V V A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 20 V, IC = 0 VCE = 3 V, IC = 10 mA (Pulse test) VCE = 3 V, IC = 500 mA (Pulse test)
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Note: Grade Mark hFE1 VCE(sat) VBE
60 10 — —
V V
I C = 150 mA, IB = 15 mA (Pulse test) VCE = 3 V, IC = 10 mA (Pulse test)
1. The 2SC2618 is grouped by h FE1 as follows. B RB 60 to 120 C RC 100 to 200 D RD 160 to 320
See characteristic curves of 2SC1213.
2
2SC2618
Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 150
100
50
0
50 100 150 Ambient Temperature Ta (°C)
3
Unit: mm
0.65
0.10 3 – 0.4 + – 0.05
0.16 – 0.06
+ ……
