器件名称: 2SC2618RDTL-E
功能描述: Silicon NPN Epitaxial
文件大小: 68.29KB 共5页
简 介:2SC2618
Silicon NPN Epitaxial
REJ03G0702-0200 (Previous ADE-208-1069) Rev.2.00 Aug.10.2005
Application
Low frequency amplifier Complementary pair with 2SA1121
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 35 35 4 500 150 150 –55 to +150 Unit V V V mA mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 4
2SC2618
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1*1 hFE2 Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE Min 35 35 4 — 100 10 — — Typ — — — — — — 0.2 0.64 Max — — — 0.5 320 — 0.6 — V V Unit V V V A Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCB = 20 V, IC = 0 VCE = 3 V, IC = 10 mA (Pulse test) VCE = 3 V, IC = 500 mA (Pulse test) IC = 150 mA, IB = 15 mA (Pulse test) VCE = 3 V, IC = 10 mA (Pulse test)
Note: 1. The 2SC2618 is grouped by hFE1 as follows. Grade C D Mark RC RD hFE1 100 to 200 160 to 320
Rev.2.00 Aug 10, 2005 page 2 of 4
2SC2618
Main Characteristics
Maximum Collector Dissipation Curve
Collector power dis……
