器件名称: 2N3903
功能描述: Si-Epitaxial PlanarTransistors
文件大小: 98.74KB 共2页
简 介:2N3903, 2N3904 NPN
Version 2004-01-20
Switching Transistors Si-Epitaxial PlanarTransistors NPN
Power dissipation – Verlustleistung Plastic case Kunststoffgehuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert
Standard Pinning 1=C 2=B 3=E
625 mW TO-92 (10D3) 0.18 g
Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCE0 VEB0 Ptot IC Tj TS
Grenzwerte (TA = 25/C) 2N3903, 2N3904 40 V 60 V 6V 625 mW 1) 600 mA 150/C - 55…+ 150/C
Characteristics (Tj = 25/C) Min. Collector saturation volt. – Kollektor-Sttigungsspannung IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Collector cutoff current – Kollektorreststrom VCE = 30 V, VEB = 3 V Emitter cutoff current – Emitterreststrom VCE = 30 V, VEB = 3 V IEBV – ICEV – VCEsat VCEsat VBEsat VBEsat – – – –
Kennwerte (Tj = 25/C) Typ. – – – – – – Max. 200 mV 300 mV 850 mV 950 mV 50 nA 50 nA
Base saturation voltage – Basis-Sttigungsspannung
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschludrhte in 2 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
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General……
