器件名称: 2N3903_07
功能描述: General Purpose Transistors NPN Silicon
文件大小: 85.66KB 共7页
简 介:2N3903, 2N3904
2N3903 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3
PbFree Packages are Available*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg 55 to +150 W mW/°C °C mW mW/°C TO92 CASE 29 STYLE 1 Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc
2 BASE 1 EMITTER
THERMAL CHARACTERISTICS (Note 1)
Characteristic Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
3 STRAIGHT LEAD BULK PACK
12
1
3 BENT LEAD TAPE & REEL AMMO PACK
2
MARKING DIAGRAMS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates Data in addition to JEDEC Requirements.
2N 390x ALYWG G
x = 3 or 4 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = PbFree Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
*For additional……
