器件名称: IRFP21N60L
功能描述: SMPS MOSFET
文件大小: 197.26KB 共9页
简 介:PD - 94503A
SMPS MOSFET
IRFP21N60L
HEXFET Power MOSFET Applications Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 270m 600V 160ns 21A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. TO-247AC Higher Gate voltage threshold offers improved noise immunity .
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
Max.
21 13 84 330
Units
A W W/°C V V/ns °C
c
PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
e
2.6 ±30 16 -55 to + 150 300 (1.6mm from case ) 1.1(10)
Nm (lbfin)
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 160 400 480 5.3 21 A 84 1.5 240 610 730 7.9 V
Conditions
MOSFET symbol showing the integral reverse
G S D
c
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
p-n ju……
