器件名称: IRFP21N60LPBF
功能描述: SMPS MOSFET
文件大小: 234.53KB 共9页
简 介:SMPS MOSFET
PD - 95478
IRFP21N60LPbF
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications Lead-Free
HEXFET Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 270m 160ns 21A
Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate charge results in simpler drive requirements. Enhanced dv/dt capabilities offer improved ruggedness. Higher Gate voltage threshold offers improved noise immunity . Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
TO-247AC
Max.
21 13 84 330
Units
A W W/°C V V/ns °C
c
PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and
d
2.6 ±30 11 -55 to + 150 300 (1.6mm from case ) 1.1(10)
Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Nm (lbfin)
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 160 400 480 5.3 21 A 84 1.5 240 610 730 7.9 nC A V ns
Conditions
MOSFET symbol showing the integ……
