器件名称: 2N3879
功能描述: NPN POWER SILICON TRANSISTOR
文件大小: 62.71KB 共2页
简 介:TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/526 Devices 2N3879 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C (1) Operating & Storage Junction Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC
Value
75 120 7.0 5.0 7.0 35 -65 to +200 Max. 5.0
Unit
Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 200 mW/0C for TC > 250C
TO-66* (TO-213AA)
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICEO ICEX ICBO IEBO Min. 75 5.0 4.0 25 10 Max. Unit Vdc Vdc mAdc mAdc mAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 120 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc
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2N3879 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 5.0 Vdc IC = 4.0 Adc, VCE = 5.0 Vdc IC = 4.0 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 4.0 Adc, IB = 0.4 Adc Bas……
