器件名称: 2N3879
功能描述: Silicon NPN Power Transistors
文件大小: 130.54KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3879
DESCRIPTION With TO-66 package Wide area of safe operation High sustaining voltage APPLICATIONS For high-speed switching and linearamplifier applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO(SUS) VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter sustaining voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 75 7 7 10 5 35 200 -65~200 UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICEV ICEO IEBO hFE-1 hFE-2 hFE-3 COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector output capacitance CONDITIONS IC=0.2A ; IB=0 IC=4A; IB=0.4A IC=4A; IB=0.4A VCE=120V;VBE(off)=1.5V VCE=100V;VBE(off)=1.5V TC=150℃ VCE=40V; IB=0 VEB=7V; IC=0 IC=4A ; VCE=2V IC=4A ; VCE=5V IC=0.5A……
