器件名称: 2N3791
功能描述: PNP POWER TRANSISTORS JEDEC TO-3 CASE
文件大小: 123.96KB 共2页
简 介:DATA SHEET
2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE
DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ,Tstg ΘJC 2N3789 2N3791 60 60 7.0 10 4.0 150 -65 to +200 1.17 2N3790 2N3792 80 80 UNITS V V V A A W °C °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) SYMBOL ICEV ICEV IEBO BVCEO VCE(SAT) VCE(SAT) VBE(ON) VBE(ON) VBE(ON) hFE hFE hFE hFE fT TEST CONDITIONS VCE= Rated VCEO, VEB=1.5V VCE= Rated VCEO, VEB=1.5V, TC=150°C VEB=7.0V IC=200mA IC=4.0A, IB=400mA (2N3789, 2N3790) IC=5.0A, IB=500mA (2N3791, 2N3792) VCE=2.0V, IC=5.0A (2N3789, 2N3790) VCE=2.0V, IC=5.0A (2N3791, 2N3792) VCE=4.0V, IC=10A VCE=2.0V, IC=1.0A (2N3789, 2N3790) VCE=2.0V, IC=1.0A (2N3791, 2N3792) VCE=2.0V, IC=3.0A (2N3789, 2N3790) VCE=2.0V, IC=3.0A (2N3791, 2N3792) VCE=10V, IC=500mA, f=1.0MHz 2N3789 2N3791 MIN MAX 1.0 5.0 5.0 60 1.0 1.0 2.0 1.8 4.0 25 90 50 180 15 30 4.0 2N3790 2N3792 MIN MAX 1.0 5.0 5.0 80 1.0 1.0 2.0 1.8 4.0 25 90 50 180 15 30 4.0 UNITS mA mA mA V V V V V V
MHz
(SEE REVERSE SIDE) R1
2N3789 SERIES
PNP POWER TRANSISTORS
TO-3 PACKAGE - MECHANIC……
