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2N3791

器件名称: 2N3791
功能描述: PNP HIGH POWER SILICON TRANSISTOR
文件大小: 64.35KB    共2页
生产厂商: MICROSEMI
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简  介:TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N3791 60 60 2N3792 80 80 7.0 4.0 10 5.0 85.7 Unit Vdc Vdc Vdc Adc Adc W W 0 @ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range -65 to +200 Max. 1.17 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly @ 28.57 mW/0C for TA > +250C 2) Derate linearly @ 0.857 mW/0C for TC > +1000C 0 Unit C/W TO-3* (TO-204AA) *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Current VCE = 50 Vdc VCE = 70 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc 2N3791 2N3792 2N3791 2N3792 2N3791 2N3792 V(BR)CEO 60 80 5.0 5.0 5.0 5.0 Vdc ICES mAdc ICEX mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3791, 2N3792 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc Symbol 2N3791 2N3792 IC……
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