器件名称: 2SC1383
功能描述: Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)
文件大小: 47.49KB 共3页
简 介:Transistor
2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684
5.9± 0.2
Unit: mm
4.9± 0.2
q q
Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. (Ta=25C)
Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V
2.54± 0.15
+0.3 +0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SC1383 2SC1384 2SC1383 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
emitter voltage 2SC1384 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V
0.45–0.1 0.45–0.1 1.27
+0.2
V A A W C C
1.27
13.5± 0.5
0.7–0.2
0.7± 0.1
8.6± 0.2
s Features
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC1383 2SC1384 2SC1383 2SC1384
(Ta=25C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
*1
Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IB = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz
min
typ
3.2
1
2
3
1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package
max 0.1
Unit A V
30 60 25 50 5 85 50 160 100 0.2 0.85 200 11
*2
V V 340
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to em……
