器件名称: 2SC1383
功能描述: NPN Silicon General Purpose Transistor
文件大小: 146.01KB 共3页
简 介:2SC1383/2SC1384
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
6.0±0.2
NPN Silicon
General Purpose Transistor
TO-92 MOD
4.9 ±0.2
FEATURE Power dissipation
2.0 +0.3 –0.2 14 ±0. 2
1 0. 50 +0. –0.1 1 0.45 +0. –0.1
PCM: Collector current ICM:
1 W (Tamb=25℃) 1 A
1.0±0.1
Collector-base voltage V(BR)CBO: 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
(1. 50 Typ. ) 1. 9 +0.1 –0.1 1 2 3 3.0 ±0.1
8.6±0.2
1: Emitter 2: Collector 3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage 2SC1383 2SC1384 Collector-emitter breakdown voltage 2SC1383 2SC1384 Emitter-base breakdown voltage Collector cut-off current
unless
Symbol V(BR)CBO
otherwise
Test
specified)
MIN 30 60 25 50 5 0.1 85 50 0.4 1.2 100 V V MHz 340 MAX UNIT V
conditions
Ic= 10A , IE=0
V(BR)CEO V(BR)EBO ICBO hFE(1)
IC=2mA ,
IB=0
V V A
IE= 10A, IC=0 VCB=20V , VCE=10 V, VCE=5 V, IE=0
IC= 500mA IC= 1A
DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat)
IC= 500m A, IB=50mA IC= 500mA , IB= 50mA
fT
VCE= 10 V, IC= 50mA
CLASSIFICATION OF hFE(1)
Rank Range Q 85-170 R 120-240 S 170-340
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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2SC1383/2SC1384
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
PC T……
