器件名称: 2SA1018
功能描述: Silicon NPN triple diffusion planer type
文件大小: 47.5KB 共3页
简 介:Transistor
2SC1473, 2SC1473A
Silicon NPN triple diffusion planer type
For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SC1473 2SC1473A 2SC1473 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25C)
Ratings 250 300 200 300 7 100 70 750 150 –55 ~ +150 Unit V
0.45 –0.1 1.27
+0.2
13.5±0.5
High collector to emitter voltage VCEO. High transition frequency fT.
5.1±0.2
0.45 –0.1
1.27
+0.2
emitter voltage 2SC1473A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW C C
2.3±0.2
1 2 3
2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SC1473 2SC1473A 2SC1473 2SC1473A
(Ta=25C)
Symbol ICEO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCE = 120V, IB = 0 VCE = 120V, IB = 0 IC = 100A, IC = 0 IE = 1A, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 10 200 300 7 30 220 1.2 V MHz pF min typ max 1 1 Unit A
V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*h
FE
Rank classification
P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE
Rank
1
Transistor
PC — Ta
1.0 120
2SC1473,……
