器件名称: 2SA1018
功能描述: Silicon PNP epitaxial planer type
文件大小: 36.64KB 共2页
简 介:Transistor
2SA1018
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC1473
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q
High collector to emitter voltage VCEO.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25C)
Ratings –250 –200 –5 –100 –70 750 150 –55 ~ +150 Unit V V V mA mA mW C C
13.5±0.5
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol ICEO VCEO VEBO hFE fT Cob
*
Conditions VCE = –120V, IB = 0, Ta = 60C IC = –100A, IB = 0 IE = –1A, IC = 0 VCE = –10V, IC = –5mA IC = –50mA, IB = –5mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f= 1MHz
min
typ
max –1
Unit A V V
–200 –5 60 220 –1.5 50 10
VCE(sat)
V MHz pF
*h
FE
Rank classification
Q 60 ~ 150 R 100 ~ 220 hFE
Rank
1
Transistor
PC — Ta
1000 –100 Ta=25C 900 –90 IB=–1.0mA –100 25C Ta=75C –80
2SA1018
IC — VCE
–120 VCE=–10V
IC — VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
– 0.9mA –70 –60 –50 –40 –30 ……
