器件名称: 2N3441
功能描述: MEDIUM POWER SILICON NPN TRANSISTOR
文件大小: 13.75KB 共2页
简 介:LAB
MECHANICAL DATA Dimensions in mm (inches)
3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 3.86 (0.145) rad.
SEME
2N3441
MEDIUM POWER SILICON NPN TRANSISTOR
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
FEATURES
Low Saturation Voltages High Voltage Ratings Maximum Safe–Operating–Area Curves for DC and Pulse Operation.
14.48 (0.570) 14.99 (0.590)
4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.
1.27 (0.050) 1.91 (0.750)
APPLICATIONS
Series and Shunt Regulators TO–66
PIN 1 — Base PIN 2 — Emitter Case is Collector.
Audio Amplifiers Power Switching Circuits Solenoid and Relay Drivers
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IB Ptot Tj , Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Base Current Total Power Dissipation Derate above 25°C Operating and Storage Junction Temperature Range 160V 140V 7V 3A 2A 25W 0.142 W /°C –65 to 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/94
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS VCEO(sus)* ICEO ICEX IEBO Collector – Emitter Sustaining Voltage Collector Cut–off Current Collector Cut–off Current Emitter Cut–off Current ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter On ……
