器件名称: 2N3441
功能描述: NPN POWER SILICON TRANSISTOR
文件大小: 64.38KB 共2页
简 介:TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/369 Devices 2N3441 Qualified Level JANTX
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VCER VEBO IB IC PT TJ, Tstg Symbol RθJC RθJA
Value
140 160 150 7.0 2.0 3.0 3.0 25 -65 to +200 Max. 7.0 58.5
Units
Vdc Vdc Vdc Vdc Adc Adc W W 0 C Unit
0 0
@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1)
TO-66* (TO-213AA)
C/W C/W
2)
Derate linearly @ 17.1 mW/0C for TA > +250C Derate linearly @ 143 mW/0C for TC > +250C
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO V(BR)CER V(BR)CEX ICEX IEBO Min. 140 150 160 1.0 1.0 Max. Unit Vdc Vdc Vdc mAdc mAdc
OFF CHARACTERISTICS
Collector-Emitter Voltage IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 100 mAdc, RBE = 100 Collector-Emitter Breakdown Voltage IC = 100 mAdc, VBE = -1.5 Vdc Collector-Base Cutoff Current VCB = 140 Vdc, VBE = -1.5 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc
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2N3441 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. 50 25 10 Max. Unit
ON CHARACTER……
