器件名称: 2SD1101
功能描述: Silicon NPN Epitaxial
文件大小: 35.8KB 共1页
简 介:SMD Type
Silicon NPN Epitaxial 2SD1101
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
Low Frequency amplifier.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC
iC(peak)
Rating 25 20 5 0.7 1 150 150 -55 to +150
Unit V V V A A mW
PC Tj Tstg
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol Testconditons Min 25 20 5 1.0 85 240 0.5 1.0 V V Typ Max Unit V V V ìA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ICBO hFE VCB = 20V, IE=0 VCE = 1V , IC = 0.15A
VCE(sat) IC = 0.5A , IB = 0.05A VBE VCE = 1V , IC = 0.15A
hFE Classification
Marking hFE AB 85 170 AC 120 240
+0.1 0.38-0.1
0-0.1
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