器件名称: 2SD1101ACTL-E
功能描述: Silicon NPN Epitaxial
文件大小: 172.17KB 共6页
简 介:2SD1101
Silicon NPN Epitaxial
REJ03G0775-0200 (Previous ADE-208-1142) Rev.2.00 Aug.10.2005
Application
Low frequency amplifier Complementary pair with 2SB831
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 1 2
1. Emitter 2. Base 3. Collector
Note:
Marking is “AC”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 0.7 1 150 150 –55 to +150 Unit V V V A A mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD1101
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE Min 25 20 5 — 120 — — Typ — — — — — — — Max — — — 1.0 240 0.5 1.0 Unit V V V A V V Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A IC = 0.5 A, IB = 0.05 A VCE = 1 V, IC = 0.15 A
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD1101
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (mW)
150 500 2.5
Typical Output Characteristics
Collector Current IC (mA)
400
PC
2.0 1.5 1.0
= 5 0.
100
W
300
2……
