器件名称: 2SC3052
功能描述: NPN Silicon Plastic-Encapsulate Transistor
文件大小: 352.49KB 共3页
简 介:2SC3052
Elektronische Bauelemente
NPN Silicon Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
3.COLLECTOR
Dim
A
Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450
Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
A
L
1.BASE 2.EMITTER
3
B C
B S
2
FEATURES
n
Top View
1
D G H J K L S V
Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA)
V
G
n
n
C D H K J
All Dimension in mm
MAXIMUM RATINGS* TA=25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 50 50 6
0.2 150
o
Units V V V A mW
o
125, -55~125
C
ELECTRICAL CH ARACTERIST ICS (Tam b = 25 oC unless otherwise sp ecified )
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) Test conditions Ic=100 A, IE=0 Ic= 100 A, IB=0 IE= 100 A, IC=0 VCB= 50 V , IE=0 VEB= 6V , IC=0 VCE= 6V, IC= 1mA VCE= 6V, IC= 0.1mA I C = 100mA, IB = 10mA I C = 100mA, IB = 1……