器件名称: 2SC3052-SOT-23-3L
功能描述: TRANSISTOR (NPN)
文件大小: 36.74KB 共1页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SC3052
FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃)
TRANSISTOR (NPN)
SOT-23-3L
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE=6V, IC=0.1mA IC=100 mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC= 10mA 180 50
0. 025 0. 95
2. 80 0. 05 1. 60 0. 05
unless otherwise specified)
Test conditions MIN 50 50 6 0.1 0.1 150 800 TYP MAX UNIT V V V
Ic=100A, IE=0 Ic= 100A, IB=0 IE=100A, IC=0 VCB=50 V , IE=0 VEB= 6V , IC=0
0. 35
2. 92 0. 05
1. 9
A A
VCE=6V, IC=1mA
0.3 1
V V MHz
fT
CLASSIFICATION OF hFE(1) Marking Range LE 150-300 LF 250-500 LG 400-800
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