器件名称: 2SC2735
功能描述: Silicon NPN Epitaxial
文件大小: 36.54KB 共1页
简 介:SMD Type
Silicon NPN Epitaxial 2SC2735
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 50 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Symbol Testconditons Min 30 20 3 0.5 1.0 40 0.85 600 1200 210 130 21 6.5 1.5 pF MHz mV mV dB dB Typ Max Unit V V V ìA V V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ICBO VCB = 10V, IC = 0
VCE(sat) IC = 10 mA, IB = 5 mA hFE Cob CG VOSC1 VOSC2 VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 6 V, IC = 2 mA,f = 900 MHz, fosc = 930 MHz (0dBm) ,f = 30 MHz VCC = 6 V, IC = 5 mA, f = 930 MHz VCC = 12 V, IC = 7 mA, fOSC = 930 MHz VCC = 12 V, IC = 2 mA,f = 200 MHz, fOSC = 230 MHz (0dBm) VCC = 12 V, IC = 2 mA, f = 200 MHz, fOSC = 230 MHz (0dBm)
Oscillating output voltage Conversion gain Noise figure
CG NF
Marking
Marking JC
+0.……
