器件名称: 2SC2735
功能描述: isc Silicon NPN RF Transistor
文件大小: 144.22KB 共4页
简 介:INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC2735
DESCRIPTION Low Noise High Gain
APPLICATIONS Designed for use in UHF ~ VHF local oscillator, frequency converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
PC
Collector Power Dissipation @TC=25℃
0.15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2735
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
30
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; RBE= ∞
20
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10μA ; IC= 0
3
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 20mA ; IB= 4mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.5
μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
40
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
600
1200
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
0.85
1.5
pF
CG
Conversion Gain
IC= 2mA ; VCC= 12V;f= 200MHz fOSC= 230MHz(0dBm) IC= 2mA ; VCC= 12V;f= 200MHz fOSC= 230MHz(0dBm)
21
dB
NF
Noise Figure
6.5
dB
VOSC
Oscillating output voltag……
