器件名称: 2SA743
功能描述: isc Silicon PNP Power Transistor
文件大小: 104.76KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA743
DESCRIPTION Good Linearity of hFE High Collector-Emitter Breakdown VoltageV(BR)CEO= -50V (Min) Complement to Type 2SC1212
APPLICATIONS Designed for use in low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous Collector Power Dissipation @ Ta=25℃
-1
A
0.75 W
PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA743
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
-50
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA; RBE= ∞
-50
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
-4
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
B
-1.5
V
VBE(on)
Base-Emitter On Voltage
IC= -50mA ; VCE= -4V
-1.0
V
ICER
Collector Cutoff Current
VCE= -50V; RBE= 1kΩ
-20
μA
hFE-1
DC Current Gain
IC= -50mA ; VCE= -4V
60
200
hFE-2
DC Current Gain
IC= -1A ; VCE= -4V
20
fT
Current-Gain—Bandwidth Product
IC= -30mA ; VCE= -4V
120
MHz
hFE-1 Cla……
