器件名称: 2SA743A
功能描述: Silicon PNP Epitaxial
文件大小: 31.38KB 共6页
简 介:2SA743, 2SA743A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
2SA743 –50 –50 –4 –1 0.75 8 150 –55 to +150
2SA743A –80 –80 –4 –1 0.75 8 150 –55 to +150
Unit V V V A W °C °C
2SA743, 2SA743A
Electrical Characteristics (Ta = 25°C)
2SA743 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CER I CER DC current tarnsfer ratio hFE*1 hFE Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Min –50 –50 –4 — — 60 20 — — — Typ — — — — — 120 — Max — — — –20 — 200 — 2SA743A Min –80 –80 –4 — — 60 20 — — — Typ — — — — — 120 — Max — — — — –20 200 — V V MHz Unit V V V A Test conditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCE = –50 V, RBE = 1 k VCE = –80 V, RBE = 1 k VCE = –4 V, IC = –50 mA VCE = –4 V, IC = –1 A (pulse) VCE = –4 V, IC = –50 mA I C = –1 A, IB = –0.1 A VCE = –4 V, IC = –30 mA
–0.65 –1.0 –0.75 –1.5 120 —
–0.65 1.0 –0.75 –1.5 120 —
Gain bandwidth product f T Note: B 60 to 120
1. The 2SA743 and 2……
