器件名称: 2N5069
功能描述: Silicon NPN Power Transistors
文件大小: 113.14KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-3 package Complement to type 2N4901/4902/4903 Low collector saturation voltage APPLICATIONS For general–purpose switching and power amplifier applications.
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5067 2N5068 2N5069
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N5067 VCBO Collector-base voltage 2N5068 2N5069 2N5067 VCEO Collector-emitter voltage 2N5068 2N5069 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 5 10 1 87.5 150 -65~200 V A A A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5067 VCEO(SUS) Collector-emitter sustaining voltage 2N5068 2N5069 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=1A; IB=0.1A IC=5A ;IB=1A IC=1A ; VCE=2V IC=0.2A ;IB=0 SYMBOL
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